Schottky diode SD11801
bridgehigh-voltagehigh-speed switching

Schottky diode
Schottky diode
Schottky diode
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Characteristics

Technology
Schottky
Mounting
bridge
Electrical characteristics
high-voltage, high-speed switching
Technical characteristics
silicon carbide, fast recovery
Reverse voltage

650 V, 1,200 V, 1,300 V, 1,700 V

Temperature range

Max.: 210 °C
(410 °F)

Min.: -40 °C
(-40 °F)

Description

■ 200°C Operation ■ High blocking voltage with low RDS(on)Hermetic Packages Solitron’s Silicon Carbide (SiC) Schottky diodes range from 650V to 1700V and include singles, duals and bridge configurations. Available in a wide variety of packages including hermetic they offer designers high efficiency and the ultimate in robust technology. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon Carbide (SiC) diodes maintain constant characteristics, resulting in better performance. Hermetic TO-258 packages with 200°C operation make these 650V TO 1700V SiC diodes ideal for power supplies, motor controls and applications requiring the smallest size, lightest weight and highest efficiency levels. COTS, TX, TXV and S level screening is available. Customized configurations and packaging including power modules are available upon request. See Solitron’s PowerMOD series for additional information.

Catalogs

SD11801
SD11801
3 Pages
SD11804
SD11804
3 Pages
SD11803
SD11803
3 Pages
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